LITE-ON
SEMICONDUCTOR
STPR1010CT thru 1020CT
REVERSE VOLTAGE -
100
to
200
Volts
FORWARD CURRENT -
10
Amperes
SUPER FAST
GLASS PASSIVATED RECTIFIERS
FEATURES
Glass passivated chip
Superfast switching time for high efficiency
Low forward voltage drop and high current capability
Low reverse leakage current
High surge capacity
Plastic package has UL flammability classification
94V-0
B
C
K
PIN
1
2
3
TO-220AB
L
M
D
A
E
TO-220AB
MAX.
MIN.
DIM.
14.22
15.88
A
9.65
10.67
B
C
2.54
3.43
D
5.84
6.86
9.28
8.26
E
6.35
F
-
14.73
12.70
G
2.29
2.79
1.14
0.51
I
J
0.30
0.64
K
3.53
4.09
3.56
4.83
L
M
1.14
1.40
2.92
2.03
N
All Dimensions in millimeter
H
F
G
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
I
J
N
H H
PIN 1
PIN 3
PIN 2
CASE
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Non Repetitive Peak Forward
Surge Current Per Diode
Sinusoidal (JEDEC Method)
Maximum forward Voltage
Pulse Width =300us
Duty cycle
SYMBOL
STPR1010CT
100
70
100
10
50
55
0.975
0.925
1.25
1.20
5
100
80
30
4.0
-55 to +150
STPR1020CT
200
140
200
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
@T
C
=
125 C
T
P
=
10ms
T
P
=
8.3ms
I
FSM
A
I
F
=5A@T
J
=25
℃
I
F
=5A@T
J
=125
℃
I
F
=10A@T
J
=25
℃
I
F
=10A@T
J
=125
℃
@T
J
=25 C
@T
J
=100 C
V
F
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
per element (Note 1)
I
R
C
J
T
RR
R
0JC
uA
pF
ns
C/W
Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance
Operating and Storage Temperature Range
T
J
,T
STG
C
REV. 4, 13-Sep-2001, KTGC04
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Reverse Recovery Test Conditions:I
F
=0.5A,I
R
=1.0A,I
RR
0.25A.