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200U(R) 参数 Datasheet PDF下载

200U(R)图片预览
型号: 200U(R)
PDF下载: 下载PDF文件 查看货源
内容描述: [可控硅、晶闸管]
分类和应用: 可控硅
文件页数/大小: 4 页 / 649 K
品牌: LIUJING [ 上海柳晶电子电器有限公司 ]
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200U(R)
2). Forward Conduction
Parameters
I
F(AV)
Max. average forward current
@ Case temperature
6F(R)
250
145
390
6550
I
FSM
Max. peak, one-cycle forward,
non-repetitive surge current
6850
5500
5750
214
I
2
t
Maximum I
2
t for fusing
195
151
138
I
2
t
Maximum I
2
t for fusing
2140
0.61
0.83
0.75
0.49
1.30
-40 to 200
-40 to 200
0.18
0.08
37
28
250
DO-9
A
2
s
V
m
Ω
V
V
F(TO)1
Low level value of threshold voltage
V
F(TO)2
High level value of threshold voltage
r
f1
r
f2
V
FM
T
J
T
stg
R
thJC
R
thCS
T
wt
Low level value of forward slope resistance
High level value of forward slope resistance
Max. forward voltage drop
Max. junction operating temperature range
Max. storage temperature range
Max. thermal resistance, junction to case
Max. thermal resistance, case to heatsink
Max. allowed mounting torque
±
10%
Approximate weight
Case style
A
2
s
A
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max.
Unit
A
Conditions
180
°
conduction, half sine wave
I
F(RMS)
Max. RMS forward current
t = 0.1 to 10ms, no voltage reapplied
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
(I >
π
x I
F(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
(I >
π
x I
F(AV)
), T
J
= T
J
max.
I
pk
= 630A, T
J
= 25
, t
p
= 10ms
rectangular wave
DC operation
Mounting surface, smooth, flat and greased
Not lubricated threads
Lubricated threads
unleaded device
See Outline Table
K/W
Nm
g
Δ
R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Conduction angle
180
°
120
°
90
°
60
°
30
°
Sinusoidal conduction
0.020
0.024
0.031
0.045
0.077
Rectangular conduction
0.015
0.025
0.034
0.047
0.077
Units
Conditions
K/W
T
J
= T
J
max.
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