30HF(R)
2). Forward Conduction
Parameters
Max. average forward current
@ Case temperature
30HF(R)
10 to 120
30
140
62
570
I
FSM
Max. peak, one-cycle forward,
non-repetitive surge current
595
480
500
1600
I
2
t
Maximum I
2
t for fusing
1450
1150
1050
I
2
√
t
Maximum I
2
√
t for fusing
16000
0.65
0.76
4.29
3.8
1.30
-65 to 190
1.50
-65 to 160
A
2
√
s
V
A
2
s
A
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half
wave, Initial
T
J
= T
J
max.
140 to 160
30
110
Unit
A
℃
Conditions
I
F(AV)
180
°
conduction, half sine wave
I
F(RMS)
Max. RMS forward current
t = 0.1 to 10ms, no voltage reapplied
T
J
= T
J
max.
T
J
= T
J
max.
I
pk
= 94A, T
J
= 25
℃
, t
p
= 400
μ
s
rectangular wave
V
F(TO)
Low level value of threshold voltage
V
F(TO)
High level value of threshold voltage
r
f
r
f
V
FM
T
J
T
stg
R
thJC
R
thCS
T
wt
Low level value of forward slope resistance
High level value of forward slope resistance
Max. forward voltage drop
Max. junction operating temperature range
Max. storage temperature range
Max. thermal resistance, junction to case
Max. thermal resistance, case to heatsink
Max. allowed mounting torque
±
10%
Approximate weight
Case style
m
Ω
V
℃
DC operation
Mounting surface, smooth, flat and greased
Not lubricated threads
unleaded device
See Outline Table
0.95
0.25
2.3 - 3.4
20 - 30
17 (0.6)
DO-5
K/W
Nm
lbf · in
g (oz)
Δ
R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Conduction angle
180
°
120
°
90
°
60
°
30
°
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Sinusoidal conduction
0.14
0.16
0.21
0.30
0.50
Rectangular conduction
0.10
0.17
0.22
0.31
0.50
Units
Conditions
K/W
T
J
= T
J
max.
2/5
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