KK600A800~1800V
Y40KKE
Chinese Type Fast Thyristors (Capsule Version)
L i u j in g r e cti fi e r co ., L td .
�½标型
-
快速晶闸管
(
平板式
)
FEATURES
1). Interdigitated amplifying gates
2). Fast turn-on and high di/dt
3). Low switching losses
I
T(AV)
V
DRM
/V
RRM
t
q
I
TSM
I
2
t
985A
800~1800V
24~50
μ
s
10KA
500 10
3
A
2
S
TYPICAL APPLICATIONS
1). Inductive heating
2). Electronic welders
3). Self-commutated inverters
THE MAIN PARAMETERS
SYMBOL
I
T(AV)
V
DRM
V
RRM
I
DRM
I
RRM
I
TSM
I
2
t
V
TO
r
T
V
TM
dv/dt
di/dt
I
rm
t
rr
Q
rr
tq
I
GT
V
GT
I
H
V
GD
R
th(j-h)
F
m
T
stg
W
t
Size
CHARACTERISTIC
Mean forward current
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Repetitive peak off-state current
Repetitive peak reverse current
Surge on-state current
I
2
T for fusing coordination
Threshold voltage
On-state slop resistance
Peak on-state voltage
Critical rate of rise of off-state voltage
Critical rate of rise of on-state current
Reverse recovery current
Reverse recovery time
Recovery charge
Circuit commutated turn-off time
Gate trigger current
Gate trigger voltage
Holding current
Non-trigger gate voltage
Thermal resistance
Junction to heatsink
Mounting force
Stored temperature
Weight
Package box size
TEST CONDITIONS
180
°
half sine wave 50Hz
Double side cooled, T
hs
=55
℃
V
DRM
&V
RRM
,tp=10ms
V
DSM
&V
RSM
= V
DRM
&V
RRM
+100V
V
D
= V
DRM
V
R
= V
RRM
10ms half sine wave
V
R
=0.6V
RRM
T
j
(
℃
)
125
125
125
125
125
I
TM
=1800A, F=18KN
V
DM
=0.67V
DRM
V
DM
= 67%V
DRM
to1000A,
Gate pulse t
r
≤0.5
μ
s I
GM
=1.5A
I
TM
=1000A,tp=1000
μ
s,
di/dt=-20A/
μ
s,
VR=50V
I
TM
=1000A,tp=1000
μ
s, V
R
=50V
dv/dt=30V/
μ
s ,di/dt=-20A/
μ
s
V
A
=12V, I
A
=1A
V
DM
=67%V
DRM
At 180
°
sine, double side cooled
Clamping force 18KN
15
-40
360
95
×
95
×
50
125
125
125
125
125
25
125
24
40
0.9
20
0.3
70
4.4
155
800
VALUE
Min Type
Max
985
1800
50
10
500
1.30
0.38
1.98
500
1200
UNIT
A
V
mA
KA
A s*10
3
V
m
Ω
V
V/
μ
s
2
A/
μ
s
A
μ
s
μ
C
μ
s
mA
V
mA
V
℃
/W
KN
℃
g
mm
1/3
180
50
300
3.0
400
0.032
20
140
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LIUJING [ 上海柳晶电子电器有限公司 ]
