S50RIA
3). Triggering
Parameters
P
GM
Maximum peak gate power
S50RIA
10
2.5
2.5
20
10
250
I
GT
DC gate current required to trigger
100
50
V
GT
DC gate voltage required to trigger
3.5
2.5
I
GD
DC gate current not to trigger
5.0
V
mA
mA
T
J
= - 40
℃
T
J
= 25
℃
T
J
= 125
℃
T
J
= - 40
℃
T
J
= 25
℃
T
J
= T
J
max.
V
DRM
= rated value
V
GD
T
J
T
stg
R
thJC
R
thCS
T
wt
DC gate voltage not to trigger
Max. operating temperature range
Max. storage temperature range
Max. thermal resistance, junction to case
Max. thermal resistance, case to heatsink
Mounting torque
Approximate weight
Case style
Min.
Max.
0.2
- 40 to 125
- 40 to 125
0.35
0.25
2.8 (25)
3.4 (30)
28 (1.0)
TO-65
V
℃
℃
K/W
K/W
Nm
lbf-in
g (oz)
See Outline Table
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
T
J
= T
J
max.
Max. gate current/ voltage
not to trigger is the max.
value which. will not trigger
any unit with rated V
DRM
anode-to-cathode applied
Max. required gate trigger
current/voltage are the
lowest value which
will trigger all units 6V
anode-to-cathode applied
Unit
W
A
V
Conditions
T
J
= T
J
max.
T
J
= T
J
max.
T
J
= T
J
max.
P
G(AV)
Maximum average gate power
I
GM
+V
GM
-V
GM
Max. peak positive gate current
Max. peak positive gate current
Maximum peak positive gate voltage
Δ
R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Conduction angle
180
°
120
°
90
°
60
°
30
°
Sinusoidal conduction
0.078
0.094
0.120
0.176
0.294
Rectangular conduction
0.057
0.098
0.130
0.183
0.296
Units
Conditions
K/W
T
J
= T
J
max.
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