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ZP800A200-1000V Y38ZPBINDD 参数 Datasheet PDF下载

ZP800A200-1000V Y38ZPBINDD图片预览
型号: ZP800A200-1000V Y38ZPBINDD
PDF下载: 下载PDF文件 查看货源
内容描述: [可控硅、晶闸管]
分类和应用: 可控硅
文件页数/大小: 3 页 / 548 K
品牌: LIUJING [ 上海柳晶电子电器有限公司 ]
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ZP800A200~1000V
Y38ZPB
Chinese Type Rectifier Diodes (Capsule Version)
L i u j in g r e cti fi e r co ., L td .
�½标型
-
普通整流管
(
平板式
)
FEATURES
1). Low forward voltage drop
2). High reverse voltage
3). Hermetic metal cases with ceramic insulators
TYPICAL APPLICATIONS
1). All purpose high power rectifier diodes
2). High power resistance welding equipment
3). Non-controllable and half-controllable
rectifiers
4). Controlled rectifiers
I
F(AV)
V
RRM
I
FSM
I
2
t
2065 A
200~1000 V
18 KA
1620 10
3
A
2
S
THE MAIN PARAMETERS
SYMBOL
O
TEST CONDITIONS
Mean forward current
Repetitive peak reverse voltage
Repetitive peak current
Surge on-state current
I
2
T for fusing coordination
Threshold voltage
Forward slop resistance
Peak on-state voltage
Reverse recovery current
Reverse recovery time
Recovery charge
Thermal resistance
Junction to heatsink
Mounting force
Stored temperature
Weight
Package box size
I
TM
=4400A, F=15KN
I
TM
=1500A, tp=1000
μ
s, di/dt=-20A/
μ
s,V
R
=50V
At 180
°
sine, double side cooled
Clamping force 15.0KN
180 half sine wave 50Hz T
hs
=55
Double side cooled,
T
hs
=157
V
RRM
tp=10ms, V
RSM
= V
RRM
+100V
V
RM
= V
RRM
10ms half sine wave, V
R
=0.6V
RRM
T
j
(
)
190
190
190
190
190
190
190
VALUE
Min
Type
Max
2065
800
200
1000
40
18
1620
0.81
0.23
1.82
90
4.2
189
0.033
10
-40
270
20
200
UNIT
A
V
mA
KA
A
2
s*10
3
V
m
Ω
V
A
μ
s
μ
C
/W
KN
g
mm
1/3
I
F(AV)
V
RRM
I
RRM
I
FSM
I
2
t
V
FO
r
F
V
FM
I
rm
t
rr
Q
rr
R
th(j-h)
F
m
T
stg
W
t
Size
95
×
95
×
50
www.china-liujing.com