LESHAN RADIO COMPANY, LTD.
BAP64-02
10
2
f = 100 MHz; T
j
=25°C
500
400
10
C
d
(pF)
1
r
D
(
Ω)
300
200
100
10
-1
f = 1 MHz; T
j
=25°C
10
-1
1
10
10
2
0
0
4
8
12
16
20
I
F
(mA )
V
R
(V)
Fig.1 Forward resistance as a function of
forward current; typical values.
Fig.2 Diode capacitance as a function of
reverse voltage; typical values.
0
0
-1
|s
21
|
2
(dB)
- 10
-2
(1)
(2)
(3)
(4)
I
F
=100 mA.
I
F
=10 mA.
I
F
= 1 mA.
I
F
= 0.5 mA.
-3
|s
21
|
2
(dB)
- 20
-4
Diode inserted in series with a 50
Ω
stripline circuit and
biased via the analyzer Tee network.
Tamb =25°C.
Diode zero biased and inserted in
series with a 50
Ω
stripline circuit.
Tamb =25°C.
-5
0.5
1
1.5
2
2.5
3
- 30
0.5
1
1.5
2
2.5
3
f (GHz )
f (GHz )
Fig.3 Insertion loss ( |s
21
|
2
)of the diode in on-state
as a function of frequency; typical values.
Fig.4 Isolation ( |s
21
|
2
) of the diode in off-state as a
function of frequency; typical values.
S26–2/2
LRC [ LESHAN RADIO COMPANY ]
