LESHAN RADIO COMPANY, LTD.
Silicon PIN diode
FEATURES
· High voltage, current controlled
· RF resistor for RF switches
· Low diode capacitance
· Low diode forward resistance (low loss)
· Very low series inductance.
APPLICATIONS
1
BAP65 – 02
1
2
ANODE
2
CATHODE
· RF attenuators and switches
· Bandswitch for TV tuners
· Series diode for mobile communication transmit/receive switch.
SOD523 SC-79
DESCRIPTION
Planar PIN diode in a SOD523 ultra small SMD plastic package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC60134).
SYMBOL
I
V
R
I
F
P
tot
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
T
s
< 90°C
CONDITIONS
MIN.
–
–
–
-65
-65
MAX.
30
100
715
+150
+150
UNIT
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS
T
j
= 25°C unless otherwise specified.
SYMBOL
V
F
I
R
C
d
PARAMETER
forward voltage
reverse current
diode capacitance
CONDITIONS
I
F
=50 mA
V
R
=20 V
V
R
= 0; f = 1 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 3 V; f = 1 MHz
r
D
diode forward resistance
V
R
= 20 V; f = 1 MHz
I
F
= 1 mA; f = 100 MHz;
I
F
= 5 mA; f = 100 MHz; note 1
I
F
= 10 mA; f = 100 MHz; note 1
|s
21
|
2
TYP.
0.9
–
0.65
0.55
0.5
0.375
1
0.65
0.56
0.35
10
5.8
4.4
0.11
0.13
0.16
0.08
0.11
0.13
0.07
0.1
0.13
0.07
0.1
0.128
MAX.
1.1
20
–
0.9
0.8
–
–
0.95
0.9
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
UNIT
V
nA
pF
pF
pF
pF
Ω
Ω
Ω
Ω
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
isolation
I
F
= 100 mA; f = 100 MHz;
V
R
= 0; f = 900 MHz
V
R
= 0; f = 1800 MHz
V
R
= 0; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 1 mA; f = 900 MHz
I
F
= 1 mA; f = 1800 MHz
I
F
= 1 mA; f = 2450 MHz
I
F
= 5 mA; f = 900 MHz
I
F
= 5 mA; f = 1800 MHz
I
F
= 5 mA; f = 2450 MHz
|s
21
|
2
insertion loss
|s
21
|
2
insertion loss
I
F
= 10 mA; f = 900 MHz
I
F
= 10 mA; f = 1800 MHz
I
F
= 10 mA; f = 2450 MHz
I
F
= 100 mA; f = 900 MHz
I
F
= 100 mA; f = 1800 MHz
I
F
= 100 mA; f = 2450 MHz
|s
21
|
2
insertion loss
S27–1/2
LRC [ LESHAN RADIO COMPANY ]
