LESHAN RADIO COMPANY, LTD.
Dual Series
Schottky Barrier Diode
These Schottky barrier diodes are designed
for high speed switching applications, circuit
protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Min-
iature surface mount package is excellent for
hand held and portable applications where
space is limited.
BAS40-04LT1
3
1
2
CASE 318–08, STYLE 11
SOT–23 (TO–236AB)
* 40V SCHOTTKY BARRIER DIODES
ANODE
1
CATHODE
2
•
Extremely Fast Switching Speed
•
Low Forward Voltage — 0.50 Volts (Typ)
@ I
F
= 10 mAdc
3
CATHODE/ANODE
MAXIMUM RATINGS
(T
J
= 150°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Operating Junction and Storage
Temperature Range
Symbol
V
R
P
F
225
1.8
T
J
, T
stg
–55 to +150
mW
mW/°C
°C
Value
40
Unit
Volts
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (I
R
= 10
µA)
Total Capacitance (V
R
= 1.0 V, f = 1.0 MHz)
Reverse Leakage (V
R
= 25 V)
Forward Voltage (I
F
= 0.1 mAdc)
Forward Voltage (I
F
= 30 mAdc)
Forward Voltage (I
F
= 100 mAdc)
Symbol
V
(BR)R
C
T
I
R
V
F
V
F
V
F
Min
40
—
—
—
—
—
Max
—
5.0
1.0
380
500
1.0
Unit
Volts
pF
µAdc
mVdc
mVdc
Vdc
BAS40-04LT1–1/2
LRC [ LESHAN RADIO COMPANY ]
