LESHAN RADIO COMPANY, LTD.
Dual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed switch-
ing applications, circuit protection, and voltage clamping. Extremely
low forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.35 Volts (Typ) @ I
F
= 10 mAdc
BAT54SLT1
30 VOLTS DUAL HOT–CARRIER
DETECTOR AND SWITCHING
DIODES
3
1
2
CASE 318, STYLE 11
SOT–23 (TO–236AB)
ORDERING INFORMATION
Device
BAT54SLT1
Package
SOT–23
Shipping
3000/Tape & Reel
ANODE
1
3
CATHODE
2
Preferred:
devices are recommended choices for future use and best overall value.
CATHODE/ANODE
DEVICE MARKING
BAT54LT1 = LD3
MAXIMUM RATINGS
(T
J
= 125°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Forward Current(DC)
Junction Temperature
Storage Temperature Range
I
F
T
J
T
stg
Symbol
V
R
P
F
Value
30
225
1.8
200Max
125Max
–55 to +150
Unit
Volts
mW
mW/°C
mA
°C
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (I
R
= 10
µA)
Total Capacitance (V
R
= 1.0 V, f = 1.0 MHz)
Reverse Leakage (V
R
= 25 V)
Forward Voltage (I
F
= 0.1 mAdc)
Forward Voltage (I
F
= 30 mAdc)
Forward Voltage (I
F
= 100 mAdc)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc, Figure 1)
Forward Voltage (I
F
= 1.0 mAdc)
Forward Voltage (I
F
= 10 mAdc)
Forward Current (DC)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current (t < 1.0 s)
Symbol
V
(BR)R
C
T
I
R
V
F
V
F
V
F
t
rr
V
F
V
F
I
F
I
FRM
I
FSM
Min
30
—
—
—
—
—
—
—
—
—
—
—
Typ
—
7.6
0.5
0.22
0.41
0.52
—
0.29
0.35
—
—
—
Max
—
10
2.0
0.24
0.5
0.8
5.0
0.32
0.40
200
300
600
Unit
Volts
pF
µAdc
Vdc
Vdc
Vdc
ns
Vdc
Vdc
mAdc
mAdc
mAdc
BAT54SLT1–1/2
LRC [ LESHAN RADIO COMPANY ]
