LESHAN RADIO COMPANY, LTD.
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Minia-
ture surface mount package is excellent for hand held and por-
table applications where space is limited.
BAT54HT1
30 VOLT SILICON
HOT–CARRIERDETECTOR
AND SWITCHING DIODES
1
•
Extremely Fast Switching Speed
•
Low Forward Voltage – 0.35 Volts (Typ) @ I = 10 mAdc
F
2
1
CATHODE
2
ANODE
SOD– 323,CASE 477
MARKING DIAGRAM
ORDERINGINFORMATION
Device
BAT54HT1
Package
SOD–323
Shipping
3000/Tape & Reel
1
2
JV
Preferred:
devices are recommended choices for future use and best overall value.
MAXIMUM RATINGS
Rating
Reverse Voltage
Symbol
V
R
Value
30
Unit
V
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board,*
T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage
Temperature Range
*FR–5 Minimum Pad
Symbol
P
D
Max
200
1.57
R
θJA
T
J
, T
stg
635
150
Unit
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Reverse Breakdown Voltage (I
R
= 10
µA)
Total Capacitance (V
R
= 1.0 V, f = 1.0 MHz)
Reverse Leakage (V
R
= 25 V)
Forward Voltage (I
F
= 0.1 mAdc)
Forward Voltage (I
F
= 30 mAdc)
Forward Voltage (I
F
= 100 mAdc)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc, Figure 1)
Forward Voltage (I
F
= 1.0 mAdc)
Forward Voltage (I
F
= 10 mAdc)
Forward Current (DC)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current (t < 1.0 s)
Symbol
V
(BR)R
C
T
I
R
V
F
V
F
V
F
t
rr
V
F
V
F
I
F
I
FRM
I
FSM
Min
30
—
—
—
—
—
—
—
—
—
—
—
Typ
—
7.6
0.5
0.22
0.41
0.52
—
0.29
0.35
—
—
—
Max
—
10
2.0
0.24
0.5
1.0
5.0
0.32
0.40
200
300
600
Unit
Volts
pF
µAdc
Vdc
Vdc
Vdc
ns
Vdc
Vdc
mAdc
mAdc
mAdc
BAT54HT1–1/2
LRC [ LESHAN RADIO COMPANY ]
