LESHAN RADIO COMPANY, LTD.
Schottky Barrier Diodes
BAT54WT1
These Schottky barrier diodes are designed for high speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Minia-
ture surface mount package is excellent for hand held and por-
table applications where space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.35 Volts (Typ) @ I
F
= 10 mAdc
1
2
30 VOLTS SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODES
3
CASE 419, STYLE 2
SOT–323 (SC–70)
ORDERING INFORMATION
Device
BAT54WT1
Package
SOT–323
Shipping
3000/Tape & Reel
3
CATHODE
1
ANODE
Preferred:
devices are recommended choices for future use and best overall value.
DEVICE MARKING
BAT54LT1 = B4
MAXIMUM RATINGS
(T
J
= 125°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Forward Current(DC)
Junction Temperature
Storage Temperature Range
I
F
T
J
T
stg
Symbol
V
R
P
F
Max
30
200
1.6
200Max
125Max
–55 to +150
Unit
Volts
mW
mW/°C
mA
°C
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage (I
R
= 10
µA)
Total Capacitance (V
R
= 1.0 V, f = 1.0 MHz)
Reverse Leakage (V
R
= 25 V)
Forward Voltage (I
F
= 0.1 mAdc)
Forward Voltage (I
F
= 30 mAdc)
Forward Voltage (I
F
= 100 mAdc)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc, Figure 1)
Forward Voltage (I
F
= 1.0 mAdc)
Forward Voltage (I
F
= 10 mAdc)
Forward Current (DC)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current (t < 1.0 s)
Symbol
V
(BR)R
C
T
I
R
V
F
V
F
V
F
t
rr
V
F
V
F
I
F
I
FRM
I
FSM
Min
30
—
—
—
—
—
—
—
—
—
—
—
Typ
—
7.6
0.5
0.22
0.41
0.52
—
0.29
0.35
—
—
—
Max
—
10
2.0
0.24
0.5
0.8
5.0
0.32
0.40
200
300
600
Unit
Volts
pF
µAdc
Vdc
Vdc
Vdc
ns
Vdc
Vdc
mAdc
mAdc
mAdc
BAT54WT1–1/2
LRC [ LESHAN RADIO COMPANY ]
