LESHAN RADIO COMPANY, LTD.
Dual Switching Diodes
BAV70WT1
3
DEVICE MARKING
BAV70WT1 = A4
1
2
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Symbol
(1)
CASE 419–04, STYLE 5
Max
70
200
500
Max
200
1.6
0.625
300
2.4
417
–55 to +150
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ANODE
1
SOT–323 (SC–70)
ANODE
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
R
θJA
P
D
P
D
3
CATHODE
Alumina Substrate
(2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
R
θJA
Junction and Storage Temperature
T
J
, T
stg
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
V
(BR)
Min
70
Max
—
Unit
Vdc
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
(BR)
= 100
µAdc)
Reverse Voltage Leakage Current
(V
R
= 70 Vdc)
(V
R
= 50 Vdc)
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
Reverse Recovery Time
(I
F
= I
R
=10 mAdc, R
L
= 100Ω, I
R(REC)
= 1.0 mAdc) (Figure 1)
Forward Recovery Voltage
(I
F
= 10 mAdc, t
r
= 20 ns) (Figure 2)
1. FR–5 = 1.0
×
0.75
×
0.062 in.
2. Alumina = 0.4
×
0.3
×
0.024 in. 99.5% alumina.
3.For each individual diode while the seeond diode is unbiased.
t
rr
V
RF
I
R1
I
R2
C
D
V
F
—
—
—
5.0
100
1.5
µAdc
nAdc
pF
mVdc
—
—
—
—
—
—
715
855
1000
1250
6.0
1.75
ns
V
BAV70WT1–1/3
LRC [ LESHAN RADIO COMPANY ]
