LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
BAV74LT1
3
1
ANODE
3
CATHODE
1
2
ANODE
2
CASE 318–08, STYLE 9
SOT–23 (TO–236AB)
DEVICE MARKING
BAV74LT1 = JA
MAXIMUM RATINGS
(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Value
50
200
500
Unit
Vdc
mAdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
θJA
P
D
556
300
2.4
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
R
θJA
T
J
, T
stg
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) ( EACH DIODE )
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
(BR)
= 5.0
µAdc)
Reverse Voltage Leakage Current
(V
R
= 50 Vdc, T
J
= 125°C)
(V
R
= 50Vdc)
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Forward Voltage
(I
F
= 100 mAdc)
V
(BR)
I
R
—
—
C
D
V
F
—
—
1.0
4.0
ns
—
100
0.1
2.0
pF
Vdc
50
—
Vdc
µAdc
Reverse Recovery Time
t
rr
(I
F
=I
R
=10mAdc, I
R(REC)
=1.0mAdc, measured at I
R
= 1.0 mA, R
L
=100Ω)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
G6–1/2
LRC [ LESHAN RADIO COMPANY ]
