LESHAN RADIO COMPANY, LTD.
BAV99WT1 BAV99RWT1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
PD
200
mW
FR–5 Board, (Note 1.) TA = 25°C
Derate above 25°C
1.6
625
300
mW/°C
°C/W
mW
Thermal Resistance Junction to Ambient
Total Device Dissipation
RθJA
PD
Alumina Substrate, (Note 2.) TA = 25°C
Derate above 25°C
2.4
417
mW/°C
°C/W
°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
RθJA
TJ,Tstg
–65 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 µA)
V(BR)
IR
70
––
––
––
––
––
2.5
30
Vdc
Reverse Voltage Leakage Current (VR = 70 Vdc)
(VR = 25 Vdc, TJ = 150°C)
µAdc
(VR = 70 Vdc, TJ = 150°C)
50
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage
CD
VF
1.5
pF
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
––
––
––
––
715
855
mVdc
1000
1250
Reverse Recovery Time
RL = 100 Ω
trr
––
––
6.0
ns
V
(IF=IR=10 mAdc, iR(REC)=1.0mAdc) (Figure 1)
Forward Recovery Voltage (IF = 10 mA, t r = 20 ns)
VFR
1.75
1. FR–5 = 1.0 × 0.75 × 0.062 in.
2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina.
2.0 k
820 Ω
+10 V
I F
t p
t r
t
0.1µF
I F
100 µH
0.1 µF
t rr
t
10%
90%
D.U.T.
i R(REC) = 1.0 mA
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
50 Ω OUTPUT
PULSE
GENERATOR
I R
OUTPUT PULSE
INPUT SIGNAL
V R
(I F = I R = 10 mA; MEASURED
at i R(REC) = 1.0 mA)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA.
Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA.
Notes: 3. t p » t rr
Figure 1. Recovery Time Equivalent Test Circuit
BAV99WT1 BAV99RWT1–2/3