LESHAN RADIO COMPANY, LTD.
Dual Switching Diodes
BAW56WT1
3
1
DEVICE MARKING
BAW56WT1 = A1
2
CASE 419–04, STYLE 4
SOT–323 (SC–70)
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Reverse Voltag
Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Max
70
200
500
Unit
Vdc
mAdc
mAdc
CATHODE
1
CATHODE
2
3
ANODE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate
(2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
200
1.6
0.625
300
2.4
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
R
θJA
P
D
R
θJA
T
J
, T
stg
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
V
(BR)
I
R
—
—
—
C
D
V
F
—
—
—
t
rr
—
—
715
855
1000
1250
6.0
ns
—
30
2.5
50
2.0
pF
mVdc
Min
70
Max
—
Unit
Vdc
µAdc
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
(BR)
= 100
µAdc)
Reverse Voltage Leakage Current
(V
R
= 25 Vdc, T
J
= 150°C)
(V
R
= 70 Vdc)
(V
R
= 70 Vdc, T
J
= 150°C)
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 60 mAdc)
(I
F
= 150 mAdc)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, R
L
= 100
Ω,
I
R(REC)
= 1.0 mAdc) (Figure 1)
1. FR–5 = 1.0
×
0.75
×
0.062 in.
2. Alumina = 0.4
×
0.3
×
0.024 in. 99.5% alumina.
BAW56WT1–1/2