LESHAN RADIO COMPANY, LTD.
Silicon Variable Capacitance Diode
• For UHF and TV/TR tuners
• Large capacitance ratio, low series resistance
1
BB 535
1
CATHODE
2
ANODE
2
CASE 477– 02, STYLE 1
SOD– 323
MAXIMUM RATINGS
Parameter
Diode Reverse Voltage
Peak reverse voltage ( R > 5kΩ)
Forward Current
Operating temperature range
Storage temperature
Symbol
V
R
V
RM
I
F
T
op
T
stg
Value
30
35
20
- 55 ~ + 125
- 55 ... + 150
Unit
V
V
mA
°C
°C
THERMAL RESISTANCE
Parameter
Junction - ambient
Symbol
R
thJA
Value
<450
Unit
K/W
DC CHARACTERISTICS
Characteristic
Reverse current
V
R
= 30 V, T
A
= 25 °C
V
R
= 30 V, T A = 85 °C
Symbol
I
R
Min
–
–
Typ
–
–
Max
10
200
Unit
nA
AC CHARACTERISTICS
Diode capacitance
V
R
= 1 V, f = 1 MHz
V
R
= 2 V, f = 1 MHz
V
R
= 25 V, f = 1 MHz
V
R
= 28 V, f = 1 MHz
Capacitance ratio
V
R
= 2 V, V
R
= 25 V, f = 1 MHz
Capacitance ratio
V
R
= 1 V, V
R
= 28 V, f = 1 MHz
Capacitance matching
V
R
= 1 ... 28 V, f = 1 MHz
Series resistance
V
R
= 3 V, f = 470 MHz
Series inductance
C
T
17.5
14.01
2.05
1.9
C
T2
/ C
T25
6
C
T1
/ C
T28
8.2
∆
C
T
/ C
T
–
r
s
pF
18.7
15
2.24
2.1
6.7
8.9
–
0.55
2
20
16.1
2.4
2.3
–
7.5
–
9.8
%
2.5
Ω
–
0.65
–
nH
–
Ls
S6–1/3
LRC [ LESHAN RADIO COMPANY ]
