LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
3
COLLECTOR
2
BASE
BC807-16LT1
BC807-25LT1
BC807-40LT1
1
EMITTER
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
3
Value
–45
–50
–5.0
–500
Unit
V
V
V
mAdc
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
225
1.8
R
θJA
P
D
556
300
R
θJA
T
J
, T
stg
2.4
417
–55 to +150
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Max
Unit
DEVICE MARKING
BC807–16LT1 = 5A; BC807–25LT1 = 5B; BC807–40LT1 = 5C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –10 mA)
Collector–Emitter Breakdown Voltage
(V
EB
= 0, I C = –10µA)
Emitter–Base Breakdown Voltage
(I
E
= –1.0
µA)
Collector Cutoff Current
(V
CB
= –20 V)
(V
CB
= –20 V, T
J
= 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)EBO
I
CBO
—
—
—
—
–100
–5.0
nA
µA
–5.0
—
—
V
V
(BR)CES
–50
—
—
V
V
(BR)CEO
–45
—
—
V
M1–1/2
LRC [ LESHAN RADIO COMPANY ]
