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BC856BWT1 参数 Datasheet PDF下载

BC856BWT1图片预览
型号: BC856BWT1
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管( PNP硅) [General Purpose Transistors(PNP Silicon)]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 215 K
品牌: LRC [ LESHAN RADIO COMPANY ]
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
These transistors are designed for general purpose
amplifier applications. They are housed in the SOT–323/
SC–70 which is designed for low power surface mount
applications.
1
BASE
3
COLLECTOR
BC856AWT1, BWT1
BC857AWT1, BWT1
BC858AWT1, BWT1
CWT1
3
2
EMITTER
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
BC856
–65
–80
–5.0
–100
BC857
–45
–50
–5.0
–100
BC858
–30
–30
–5.0
–100
Unit
V
V
V
mAdc
1
2
CASE 419–02, STYLE 3
SOT– 323 / SC-70
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
R
θJA
T
J
, T
stg
Max
150
833
–55 to +150
Unit
mW
°C/W
°C
DEVICE MARKING
BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F;
BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –10 mA)
Collector–Emitter Breakdown Voltage
(I
C
= –10
µA,
V
EB
= 0)
BC856 Series
BC857 Series
BC858 Series
BC856 Series
V
(BR)CEO
– 65
– 45
– 30
– 80
– 50
– 30
– 80
– 50
– 30
– 5.0
– 5.0
– 5.0
– 15
– 4.0
v
BC857 Series
BC858 Series
Collector–Base Breakdown Voltage BC856 Series
(I
C
= – 10
µA)
Emitter–Base Breakdown Voltage
(I
E
= – 1.0
µA)
BC857 Series
BC858 Series
BC856 Series
V
(BR)CES
v
V
(BR)CBO
v
BC857 Series,
BC858 Series
Collector Cutoff Current (V
CB
= – 30 V)
(V
CB
= – 30 V, T
A
= 150°C)
1.FR–5=1.0 x 0.75 x 0.062in
V
(BR)EBO
v
nA
µA
I
CBO
K5–1/5