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BC858BWT1 参数 Datasheet PDF下载

BC858BWT1图片预览
型号: BC858BWT1
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管( PNP硅) [General Purpose Transistors(PNP Silicon)]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 215 K
品牌: LRC [ LESHAN RADIO COMPANY ]
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LESHAN RADIO COMPANY, LTD.
BC856AWT1, BWT1 BC857AWT1, BWT1, BC858AWT1, BWT1, CWT1
BC856
h
FE
, DC CURRENT GAIN (NORMALIZED)
–1.0
V
CE
= –5.0V
T
A
= 25°C
2.0
1.0
0.5
0.2
0
–0.1–0.2
–1.0 –2.0 –5.0 –10 –20 –50 –100–200
I
C
, COLLECTOR CURRENT (mA)
–0.2
–0.5 –1.0 –2.0
–5.0
–10 –20
–50 –100 –200
T
J
= 25°C
V, VOLTAGE (VOLTS)
–0.8
V
BE(sat)
@ I
C
/I
B
=10
–0.6
–0.4
–0.2
V
CE(sat)
@ I
C
/I
B
= 10
V
BE
@V
CE
= –5.0 V
I
C
, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
V
CE
, COLLECTOR– EMITTER VOLTAGE (VOLTS)
Figure 8. “On” Voltage
θ
VB
, TEMPERATURE COEFFICIENT (mV/°C)
–2.0
–1.6
I
C
=
–20mA
–50mA
–100mA –200mA
–1.0
–1.4
–1.8
–2.2
–2.6
–3.0
–0.2
–1.2
–0.8
–0.4
–10mA
θ
VB
for V
BE
–55°C to 125°C
T
J
= 25°C
0
–0.02
–0.05 –0.1 –0.2
–0.5 –1.0 –2.0
–5.0
–10 –20
–0.5 –1.0 –2.0
–5.0
–10 –20
–50 –100 –200
I
B
, BASE CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature Coefficient
f
T
, CURRENT– GAIN – BANDWIDTH PRODUCT T
40
C, CAPACITANCE (pF)
20
T
J
= 25°C
C
ib
500
200
100
50
20
V
CE
= –5.0V
10
6.0
4.0
2.0
–0.1 –0.2 –0.5
C
ob
–1.0 –2.0
–5.0
–10 –20
–50 –100
–1.0
–10
–100
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
K5–4/5