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BSS64LT1 参数 Datasheet PDF下载

BSS64LT1图片预览
型号: BSS64LT1
PDF下载: 下载PDF文件 查看货源
内容描述: 驱动晶体管( NPN硅) [Driver Transistors(NPN Silicon)]
分类和应用: 晶体晶体管光电二极管驱动放大器
文件页数/大小: 2 页 / 23 K
品牌: LRC [ LESHAN RADIO COMPANY ]
 浏览型号BSS64LT1的Datasheet PDF文件第2页  
LESHAN RADIO COMPANY, LTD.
Driver Transistors
NPN Silicon
3
COLLECTOR
BSS64LT1
3
1
BASE
2
EMITTER
1
2
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
V
V
CEO
CBO
EBO
Value
80
120
5.0
100
Unit
Vdc
Vdc
Vdc
mAdc
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
θJA
P
D
556
300
2.4
R
θJA
T
J
, T
stg
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
DEVICE MARKING
BSS64LT1 = AM
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 4.0 mAdc )
Collector–Base Breakdown Voltage
(I
C
= 100
µAdc
)
Emitter–Base Breakdown Voltage
(I
E
= 100
µAdc
)
Collector Cutoff Current
( V
CB
= 90 Vdc )
( T
A
= 150°C )
Emitter Cutoff Current
( V
EB
= 4.0Vdc )
I
EBO
V
(BR)CBO
V
(BR)EBO
I
CBO
0.1
500
200
nAdc
120
5.0
Vdc
Vdc
nAdc
V
(BR)CEO
80
Vdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
M40–1/2