LESHAN RADIO COMPANY, LTD.
Digital transistors (built-in resistors)
• Features
1) Built-in bias resistors enable the configuration of an inverter circuit without
connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thinfilm resistors with complete isolation to
allow positive biasing of the input. They also have the advantage of almost
completely eliminating parasitic effects.
3) Only the on/ off conditions need to be set for operation, making device
design easy.
• Structure
PNP digital transistor (with built-in resistors)
•Equivalent circuit
2.9 + 0.2
1.9+ 0.2
0.95+ 0.95
(1)
(2)
2.8+ 0.2
+ 0.2
- 0.1
DTA144EKA
1.1
+ 0.2
- 0.1
0.8 + 0.1
IN
R1
R2
OUT
0 ~ 0.1
GND(+)
IN
OUT
GND(+)
(3)
0.15
+ 0.1
- 0.06
1.6
0.4
+ 0.1
- 0.05
All terminals have same dimensions
EIAJ: SC— 59
•
Absolute maximum ratings(T
a
=25 °C)
Parameter
symbol
V
V
cc
IN
limits
– 50
–40~+10
–30
–100
200
150
–55~+150
unit
V
V
mA
mW
°C
°C
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
a
I
O
I
C(Max.)
P
d
T
j
T
stg
•
Elecrical characteristics(T =25°C)
Parameter
Input voltage
Output Voltage
Input current
Output current
symbol
V
I(off)
Min.
—
–3.0
—
—
—
68
32.9
0.8
—
Typ.
—
—
–0.1
—
—
—
47
1
250
Max.
–0.5
—
–0.3
–0.18
–0.5
—
61.1
1.2
—
Unit
V
V
mA
Conditions
V
CC
= – 5V, I
O
= –100
µ
A
V
O
= – 0.3V, I
O
= –2mA
I
O
/ I
I
= –10mA / –0.5mA
V
I
= – 5V
V
CC
V
I(on)
V
O(on)
I
I
I
O(off)
µ
A
—
KΩ
—
MHz
=– 50V, V
I
= 0 V
DC current gain
G
I
Input resistance
R
1
Resistance ratio
R
2
/ R
1
Transition frequency
f
T
*Transition frequency of the device
V
O
= – 5V, I
O
= – 5mA
—
—
V
CE
= –10V,I
E
= 5 mA,f=100MHz*
0.3 ~ 0.6
(1) GND
(2) IN
(3) OUT
P9–1/2
LRC [ LESHAN RADIO COMPANY ]
