LESHAN RADIO COMPANY, LTD.
Digital transistors (built-in resistors)
• Features
1) Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors (see equiva-
lent circuit).
2) The bias resistors consist of thinfilm resistors with complete
isolation to allow positive biasing of the input. They also have
the advantage of almost completely eliminating parasitic
effects.
3) Only the on/ off conditions need to be set for operation, mak-
ing device design easy.
• Structure
PNP digital transistor (Built-in resistors type)
•Equivalent circuit
(1)
DTA114YKA
2.9 + 0.2
1.9+ 0.2
0.95+0.95
(2)
2.8+ 0.2
+ 0.2
- 0.1
1.1
+ 0.2
- 0.1
0.8 + 0.1
0 ~ 0.1
IN
R1
R2
OUT
(3)
1.6
GND(+)
IN
OUT
GND(+)
0.4
+ 0.1
- 0.05
0.15
+ 0.1
- 0.06
All terminals have same dimensions
EIAJ: SC— 59
•
Absolute maximum ratings(T
a
=25 °C)
Parameter
symbol
V
V
cc
IN
limits
–50
–40~+6
–70
–100
200
150
–55~+150
unit
V
V
mA
mW
°C
°C
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
a
I
O
I
C(Max.)
P
d
T
j
T
stg
•
Elecrical characteristics(T =25°C)
Parameter
Input voltage
Output Voltage
Input current
Output current
symbol
V
I(off)
Min.
—
–1.4
—
—
—
68
7
3.7
—
Typ.
—
—
–0.1
—
—
—
10
4.7
250
Max.
–0.3
—
–0.3
–0.88
–0.5
—
13
5.7
—
Unit
V
V
mA
Conditions
V
CC
= – 5V,I
O
= –100
µ
A
V
O
= – 0.3V,I
O
=–1mA
I
O
/I
I
=–5mA/–0.25mA
V
I
= – 5V
V
CC
=– 50V,V
I
= 0 V
V
O
= – 5V,I
O
=– 5mA
—
—
V
CE
= –10V,I
E
= 5 mA,f=100MHz*
V
I(on)
V
O(on)
I
I
I
O(off)
µ
A
—
KΩ
—
MHz
DC current gain
G
I
Input resistance
R
1
Resistance ratio
R
2
/ R
1
Transition frequency
f
T
*Transition frequency of the device
0.3 ~ 0.6
(1) GND
(2) IN
(3) OUT
P4–1/2
LRC [ LESHAN RADIO COMPANY ]
