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L2N7002WT1G 参数 Datasheet PDF下载

L2N7002WT1G图片预览
型号: L2N7002WT1G
PDF下载: 下载PDF文件 查看货源
内容描述: 小信号MOSFET 115毫安, 60 V的N沟道SOT- 323 [Small Signal MOSFET 115 mA, 60 V N-Channel SOT-323]
分类和应用:
文件页数/大小: 7 页 / 273 K
品牌: LRC [ LESHAN RADIO COMPANY ]
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LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
115 mA, 60 V
N–Channel SOT–323
We declare that the material of product
compliance with RoHS requirements.
L2N7002WT1G
3
1
2
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (R
GS
= 1.0 MΩ)
Drain Current
– Continuous T
C
= 25°C (Note 1.)
– Continuous
T
C
= 100°C (Note 1.)
– Pulsed (Note 2.)
Gate–Source Voltage
– Continuous
– Non–repetitive (tp
50
µs)
Symbol
V
DSS
V
DGR
I
D
I
D
I
DM
Value
60
60
±115
±75
±800
Unit
V
dc
V
dc
mAdc
SOT– 323 (SC-70)
115 mAMPS
60 VOLTS
R
DS(on)
= 7.5
W
N - Channel
3
V
GS
V
GSM
±20
±40
Vdc
Vpk
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 3.) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
300
2.4
R
θJA
T
J,
T
stg
417
–55 to
+150
°C/W
°C
Unit
1
mW
mW/°C
2
R
θJA
P
D
°C/W
mW
mW/°C
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
6C
W
1
2
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width
300
µs,
Duty Cycle
2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
Gate
6C
W
Source
= Device Code
= Work Week
ORDERING INFORMATION
Device
L2N7002WT1G
L2N7002WT3G
Marking
6C
6C
Shipping
3000 Tape & Reel
10000
Tape & Reel
1/4