LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
High current capacity in compact package.
I
C
=1.5A.
Epitaxial planar type.
PNP complement: L8550H
Pb-Free Package is available.
L8050H*LT1
3
1
2
SOT–23
COLLECTOR
3
1
BASE
2
EMITTER
DEVICE MARKING AND ORDERING INFORMATION
Device
L8050HPLT1
L8050HPLT1G
L8050HQLT1
L8050HQLT1G
Marking
1HA
1HA
(Pb-Free)
1HC
1HC
(Pb-Free)
Shipping
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-continuoun
Symbol
V
CEO
V
CBO
V
EBO
I
C
Max
25
40
5
1500
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,(1)
T
A
=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
R
θ
J A
T
j,
T
S
t
g
R
θ
J A
P
D
300
2.4
417
-55 to +150
mW
mW/°C
°C/W
°C
Symbol
P
D
Max
Unit
225
1.8
556
mW
mW/°C
°C/W
Version 1.1
L8050H*LT1-1/3
LRC [ LESHAN RADIO COMPANY ]
