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L8050QLT1 参数 Datasheet PDF下载

L8050QLT1图片预览
型号: L8050QLT1
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管NPN硅 [General Purpose Transistors NPN Silicon]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 46 K
品牌: LRC [ LESHAN RADIO COMPANY ]
 浏览型号L8050QLT1的Datasheet PDF文件第2页浏览型号L8050QLT1的Datasheet PDF文件第3页  
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
High current capacity in compact package.
I
C
= 0.8A.
Epitaxial planar type.
PNP complement: L8550
Pb-Free Package is available.
L8050*LT1
3
1
2
SOT–23
COLLECTOR
3
1
DEVICE MARKING AND ORDERING INFORMATION
Device
L8050PLT1
L8050PLT1G
L8050QLT1
L8050QLT1G
Marking
80P
80P
(Pb-Free)
1YC
1YC
(Pb-Free)
Shipping
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-continuoun
Symbol
V
CEO
V
CBO
V
EBO
I
C
Max
25
40
5
800
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,(1)
T
A
=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
R
θ
J A
T
j,
T
S
t
g
R
θ
J A
P
D
300
2.4
417
-55 to +150
mW
mW/°C
°C/W
°C
Symbol
P
D
Max
Unit
225
1.8
556
mW
mW/°C
°C/W
L8050*LT1–1/3