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L9015QLT1G 参数 Datasheet PDF下载

L9015QLT1G图片预览
型号: L9015QLT1G
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管PNP硅 [General Purpose Transistors PNP Silicon]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 52 K
品牌: LRC [ LESHAN RADIO COMPANY ]
 浏览型号L9015QLT1G的Datasheet PDF文件第2页浏览型号L9015QLT1G的Datasheet PDF文件第3页  
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
Complementary to L9014.
Pb-Free package is available.
1
3
L9015*LT1
DEVICE MARKING AND ORDERING INFORMATION
Device
L9015QLT1
L9015QLT1G
(Pb-Free)
L9015RLT11
L9015RLT1G
(Pb-Free)
L9015SLT1
L9015SLT1G
(Pb-Free)
Marking
15Q
15Q
15R
15R
15S
15S
Shipping
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
1
BASE
2
SOT– 23
COLLECTOR
3
2
EMITTER
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current-continuoun
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
45
50
5
100
Unit
V
V
V
mA
THERMAL CHARATEERISTICS
Characteristic
Total Device Dissipation FR-5 Board.
T
A
=25 C
Derate above 25
C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25
o
C
Derate above 25
o
C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
?JA
T
J
,T
stg
R
?JA
P
D
300
2.4
417
-55 to +150
mW
mW/
o
C
o
Symbol
P
D
Max
Unit
o
225
o
mW
mW/
o
C
o
1.8
556
C
/
W
C
/
W
o
C
L9015*LT1-1/3