LESHAN RADIO COMPANY, LTD.
Switching Diode
FEATURE
Small plastic SMD package.
Continuous reverse voltage: max. 75 V.
High-speed switching in hybrid thick and thin-film circuits.
Pb-Free Package is available.
1
LBAS16HT1
DEVICE MARKING AND ORDERING INFORMATION
Device
LBAS16HT1
LBAS16HT1G
Marking
A6
A6
(Pb-Free)
Shipping
3000/Tape&Reel
3000/Tape&Reel
2
SOD -323
MAXIMUM RATINGS
Rating
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Value
75
200
500
Unit
Vdc
mAdc
mAdc
1
CATHODE
2
ANODE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,*
T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
**FR-4 Minimum Pad
Symbol
P
D
Max
200
1.57
Unit
mW
mW/°C
°C/W
°C
R
θJA
T
J
, T
stg
635
150
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V
R
= 75 Vdc)
(V
R
= 75 Vdc, T
J
= 150°C)
(V
R
= 25 Vdc, T
J
= 150°C)
Reverse Breakdown Voltage
(I
BR
= 100
µAdc)
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Forward Recovery Voltage
(I
F
= 10 mAdc, t
r
= 20 ns)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, R
L
= 50
Ω)
Stored Charge
(I
F
= 10 mAdc to V
R
= 5.0 Vdc, R
L
= 500
Ω)
t
rr
—
6.0
ns
C
D
V
FR
V
F
—
—
—
—
—
—
715
855
1000
1250
2.0
1.75
pF
Vdc
mV
V
(BR)
I
R
—
—
—
75
1.0
50
30
—
Vdc
µAdc
Symbol
Min
Max
Unit
Q
S
—
45
pC
LBAS16HT1–1/3
LRC [ LESHAN RADIO COMPANY ]
