LESHAN RADIO COMPANY, LTD.
Dual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
•
Extremely Fast Switching Speed
•
Low Forward Voltage — 0.35 Volts (Typ) @ IF = 10 mAdc
•
Pb-Free package is available
LBAT54LT1
3
1
2
SOT-23
ANODE
1
CATHODE
3
DEVICE MARKING AND ORDERING INFORMATION
Device
LBAT54LT1
LBAT54LT1G
(Pb-Free)
Marking
JV3
J
V3
Shipping
3000/Tape&Reel
3000/Tape&Reel
MAXIMUM RATINGS
(TJ = 125°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
Forward Current (DC)
Junction Temperature
Storage Temperature Range
Symbol
VR
PD
225
2.0
IF
TJ
Tstg
200 Max
125 Max
– 55 to +150
mW
mW/°C
mA
°C
°C
Value
30
Unit
Volts
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Reverse Breakdown Voltage (IR = 10
µA)
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
Reverse Leakage (VR = 25 V)
Forward Voltage (IF = 0.1 mAdc)
Forward Voltage (IF = 30 mAdc)
Forward Voltage (IF = 100 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1
Forward Voltage (IF = 1.0 mAdc)
Forward Voltage (IF = 10 mAdc)
Forward Current (DC)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current (t < 1.0 s)
Symbol
V(BR)R
CT
IR
VF
VF
VF
trr
VF
VF
IF
IFRM
IFSM
Min
30
—
—
—
—
—
—
—
—
—
—
—
Typ
—
7.6
0.5
0.22
0.41
0.52
—
0.29
0.35
—
—
—
Max
—
10
2.0
0.24
0.5
1.0
5.0
0.32
0.40
200
300
600
Unit
Volts
pF
µAdc
Vdc
Vdc
Vdc
ns
Vdc
Vdc
mAdc
mAdc
mAdc
LBAT54LT1-1/3