LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
Common Anode
LBAW56LT1
•
Pb−Free Package is Available.
3
ANODE
1
CATHODE
2
CATHODE
3
1
2
MAXIMUM RATINGS
(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Symbol
P
D
Value
70
200
500
Max
225
1.8
556
300
2.4
417
-55 to +150
Unit
Vdc
mAdc
mAdc
Unit
mW
mW /°C
°C/W
mW
mW /°C
°C/W
°C
SOT– 23 (TO–236AB)
ORDERING INFORMATION
Device
PACKAGE
Shipping
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board (1)
T
A
= 25 °C
erate above 25 °C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25 °C
Derate above 25 °C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
LBAW56LT1 SOT-23
3000 Tape & Reel
LBAW56LT1G SOT-23
3000 Tape & Reel
R
θJA
P
D
R
θJA
T
J
, T
stg
DEVICE MARKING
LBAW56LT1 = A1
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
V
(BR)
I
R
–
–
C
V
D
Min
70
Max
–
Unit
Vdc
µAdc
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
(BR)
= 100
µAdc)
Reverse Voltage Leakage Current
(V
R
= 25 Vdc, T
J
= 150 °C)
(V
R
= 70 Vdc)
(V
R
= 70 Vdc, T
J
= 150 °C)
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc) (Figure 1) R
L
= 100Ω
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
30
2.5
50
2.0
pF
mVdc
–
–
F
–
–
–
–
–
715
855
1000
1250
6.0
t
rr
ns
LBAW56LT1-1/3
LRC [ LESHAN RADIO COMPANY ]
