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LBC807-25LT1G 参数 Datasheet PDF下载

LBC807-25LT1G图片预览
型号: LBC807-25LT1G
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管PNP硅 [General Purpose Transistors PNP Silicon]
分类和应用: 晶体晶体管开关光电二极管
文件页数/大小: 3 页 / 54 K
品牌: LRC [ LESHAN RADIO COMPANY ]
 浏览型号LBC807-25LT1G的Datasheet PDF文件第2页浏览型号LBC807-25LT1G的Datasheet PDF文件第3页  
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
Collector current capability I
C
= -500 mA.
Collector-emitter voltage V
CEO
(max) = -45 V.
General purpose switching and amplification.
NPN complement: LBC817 Series.
Pb-Free Package is available.
LBC807-16LT1
LBC807-25LT1
LBC807-40LT1
3
1
2
DEVICE MARKING AND ORDERING INFORMATION
Device
LBC807-16LT1
LBC807-16LT1G
LBC807-25LT1
LBC807-25LT1G
LBC807-40LT1
LBC807-40LT1G
Marking
5A
5A
(Pb-Free)
5B
5B
(Pb-Free)
5C
5C
(Pb-Free)
Shipping
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
1
BASE
SOT–23
3
COLLECTOR
2
EMITTER
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
Value
–45
–50
–5.0
–500
Unit
V
V
V
mAdc
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
P
D
225
1.8
R
θJA
P
D
300
2.4
R
θJA
T
J
, T
stg
417
–55 to +150
mW
mW/°C
°C/W
°C
556
mW
mW/°C
°C/W
Max
Unit
LBC807_S-1/3