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LBC817-25LT1G 参数 Datasheet PDF下载

LBC817-25LT1G图片预览
型号: LBC817-25LT1G
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管NPN硅 [General Purpose Transistors NPN Silicon]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 58 K
品牌: LRC [ LESHAN RADIO COMPANY ]
 浏览型号LBC817-25LT1G的Datasheet PDF文件第2页浏览型号LBC817-25LT1G的Datasheet PDF文件第3页  
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
Collector current capability I
C
= 500 mA.
Collector-emitter voltage V
CEO
(max) = 45 V.
General purpose switching and amplification.
PNP complement: LBC807 Series.
Pb-Free Package is available.
LBC817-16LT1
LBC817-25LT1
LBC817-40LT1
3
1
2
DEVICE MARKING AND ORDERING INFORMATION
Device
LBC817-16LT1
LBC817-16LT1G
LBC817-25LT1
LBC817-25LT1G
LBC817-40LT1
LBC817-40LT1G
Marking
6A
6A
(Pb-Free)
6B
6B
(Pb-Free)
6C
6C
(Pb-Free)
Shipping
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
1
BASE
2
EMITTER
3
COLLECTOR
SOT–23
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
45
50
5.0
500
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
P
D
225
R
θJA
P
D
1.8
556
300
2.4
417
–55 to +150
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Max
Unit
R
θJA
T
J
, T
stg
LBC817_S-1/3