LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
•
Moisture Sensitivity Level: 1
•
ESD Rating – Human Body Model: >4000 V
ESD Rating
– Machine Model: >400 V
•
Pb-Free Packages are Available
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
Rating
Collector-Emitter Voltage
LBC856
LBC857
LBC858, LBC859
LBC856
LBC857
LBC858, LBC859
Symbol
VCEO
Value
–65
–45
–30
–80
–50
–30
–5.0
–100
Unit
V
1
2
LBC856ALT1
Series
3
SOT–23
Collector-Base Voltage
VCBO
V
3
COLLECT OR
Emitter–Base Voltage
Collector Current – Continuous
VEBO
IC
V
mAdc
1
B ASE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board,
(Note 1.) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Total Device Dissipation Alumina
Substrate, (Note 2.) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature
Symbol
PD
225
1.8
R
qJA
PD
300
2.4
R
qJA
TJ, Tstg
417
–55 to
+150
mW
mW/°C
°C/W
°C
556
mW
mW/°C
°C/W
xx
Max
Unit
2
EMIT T ER
MARKING DIAGRAM
3
xx= Device Marking
(See Table Below)
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
LBC856ALT1S-1/7
LRC [ LESHAN RADIO COMPANY ]
