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LMBT3906LT1G 参数 Datasheet PDF下载

LMBT3906LT1G图片预览
型号: LMBT3906LT1G
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管 [General Purpose Transistors]
分类和应用: 晶体晶体管光电二极管
文件页数/大小: 6 页 / 141 K
品牌: LRC [ LESHAN RADIO COMPANY ]
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
LMBT3906LT1
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
ORDERING INFORMATION
Device
LMBT3906LT1
Package
SOT–23
Shipping
3000/Tape & Reel
3000/Tape & Reel
1
2
3
SOT– 23 (TO–236AB)
LMBT3906LT1G SOT–23
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
– 40
– 40
– 5.0
– 200
Unit
Vdc
Vdc
Vdc
mAdc
3
COLLECTOR
1
BASE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
T
A
=25 °C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
R
θJA
T
J
, T
stg
2.4
417
–55 to +150
mW/°C
°C/W
°C
R
θJA
P
D
Symbol
P
D
Max
225
1.8
556
300
Unit
mW
mW/°C
°C/W
mW
2
EMITTER
DEVICE MARKING
LMBT3906LT1 = 2A
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
V
(BR)CEO
– 40
V
(BR)CBO
– 40
V
(BR)EBO
– 5.0
I
BL
I
CEX
– 50
– 50
nAdc
nAdc
Vdc
Vdc
Min
Max
Unit
Vdc
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
(I
C
= –1.0 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= –10
µAdc,
I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= –10
µAdc,
I
C
= 0)
Base Cutoff Current
(V
CE
= –30 Vdc, V
EB
= –3.0 Vdc)
Collector Cutoff Current
(V
CE
= –30 Vdc, V
EB
= –3.0 Vdc)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Width <300
µs;
Duty Cycle <2.0%.
LMBT3906LT1-1/6