LESHAN RADIO COMPANY, LTD.
Dual General Purpose
Transistors
The LMBT3946DW1T1 device is a spin–off of our popular
SOT–23/SOT–323 three–leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT–363
six–leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low–power surface mount
applications where board space is at a premium.
• h
FE
, 100–300
• Low V
CE(sat)
, < 0.4 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7–inch/3,000 Unit Tape and Reel
• Device Marking: LMBT3946DW1T1G = 46
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
(NPN)
(PNP)
Collector-Base Voltage
(NPN)
(PNP)
Emitter-Base Voltage
(NPN)
(PNP)
Collector Current-Continuous
(NPN)
(PNP)
Electrostatic Discharge
Symbol
V
CEO
Value
40
-40
V
CBO
LMBT3946DW1T1G
6
5
4
1
2
3
SOT-363/SC-88
We declare that the material of product
compliance with RoHS requirements.
3
2
1
Unit
Vdc
Q
1
Q
2
Vdc
60
-40
4
5
6
LMBT3946DW1T1*
V
EBO
6.0
-5.0
I
C
200
-200
HBM>16000,
MM>2000
Max
150
833
–55 to +150
Vdc
*Q1 PNP
Q2 NPN
mAdc
ORDERING INFORMATION
Device
Marking
Shipping
LMBT3946DW1T1G
LMBT3946DW1T3G
46
46
3000Units/Reel
10000Units/Reel
E
SD
V
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Package Dissipation
(1)
P
D
T
A
= 25°C
Thermal Resistance Junction
R
θJA
to Ambient
Junction and Storage
Temperature Range
T
J
,T
s t g
Unit
mW
°C/W
°C
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
1.
recommended footprint.
1/14