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LMBT5401LT1G 参数 Datasheet PDF下载

LMBT5401LT1G图片预览
型号: LMBT5401LT1G
PDF下载: 下载PDF文件 查看货源
内容描述: 高压晶体管 [High Voltage Transistor]
分类和应用: 晶体晶体管高压
文件页数/大小: 5 页 / 107 K
品牌: LRC [ LESHAN RADIO COMPANY ]
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LESHAN RADIO COMPANY, LTD.
High Voltage Transistor
FEATURE
Pb-Free package is available.
LMBT5401LT1
3
DEVICE MARKING AND ORDERING INFORMATION
Device
LMBT5401LT1
LMBT5401LT1G
(Pb-Free)
Package
SOT-23
SOT-23
Shipping
1
3000/Tape&Reel
3000/Tape&Reel
2
SOT– 23
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
– 150
– 160
– 5.0
– 500
Unit
Vdc
Vdc
Vdc
mAdc
1
BASE
2
EMITTER
3
COLLECTOR
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR- 5 Board (1)
T
A
=25 °C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
θJA
T
J
, T
stg
R
θJA
Symbol
P
D
Max
225
1.8
556
300
2.4
417
–55to+150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
P
D
DEVICE MARKING
LMBT5401LT1=2L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
V
(BR)CEO
– 150
V
(BR)CBO
– 160
V
(BR)EBO
-5.0
I
CES
– 50
– 50
nAdc
µAdc
Vdc
Vdc
Min
Ma x
Unit
Vdc
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –1.0 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= –100
µAdc,
I
E
= 0)
Emitter-BAse Breakdown Voltage
(I
E
= –10µAdc,I
C
=0)
Collector Cutoff Current
(V
CB
= –120 Vdc, I
E
= 0)
(V
CB
= –120 Vdc, I
E
= 0, T
A
=100 °C)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
LMBT5401LT1–1/5