LESHAN RADIO COMPANY, LTD.
High Voltage Transistors
FEATURE
Pb-Free package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
LMBT5550LT1
LMBT5550LT1G
(Pb-Free)
LMBT5551LT1
LMBT5551LT1G
(Pb-Free)
Marking
M1F
M1F
G1
G1
Shipping
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
LMBT5550LT1
LMBT5551LT1
3
1
2
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
Value
140
160
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
1
SOT–23
3
COLLECTOR
I
C
BASE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
300
2.4
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
2
EMITTER
R
θJA
P
D
R
θJA
T
J
, T
stg
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= 100
µAdc,
I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 10
µAdc,
I
C
= 0)
Collector Cutoff Current
( V
CB
= 100Vdc, I
E
= 0)
( V
CB
= 120Vdc, I
E
= 0)
( V
CB
= 100Vdc, I
E
= 0, T
A
=100 °C)
( V
CB
= 120Vdc, I
E
= 0, T
A
=100 °C)
Emitter Cutoff Current
( V
BE
= 4.0Vdc, I
C
= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width = 300
µs,
Duty Cycle = 2.0%.
I
CBO
LMBT5550
LMBT5551
LMBT5550
LMBT5551
I
EBO
—
—
—
—
—
100
50
100
50
50
nAdc
µAdc
nAdc
LMBT5550
LMBT5551
V
(BR)EBO
V
(BR)CEO
140
160
V
(BR)CBO
160
180
6.0
—
—
—
—
Vdc
LMBT5550
LMBT5551
Vdc
Vdc
—
LMBT5550LT1–1/5