LESHAN RADIO COMPANY, LTD.
High Voltage Transistor
PNP Silicon
FEATURE
High voltage.
For Telephony or Professional communication equipment applications.
NPN complement: LMBTA42LT1,LMBTA43LT1.
Pb-Free Package is available.
LMBTA92LT1
LMBTA93LT1
3
1
DEVICE MARKING AND ORDERING INFORMATION
Device
LMBTA92LT1
LMBTA92LT1G
LMBTA93LT1
LMBTA93LT1G
Marking
2D
2D
(Pb-Free)
2E
2E
(Pb-Free)
Shipping
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
2
SOT–23
3
COLLECTOR
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
V
V
CEO
CBO
EBO
Value
LMBTA92 LMBTA93
–300
–300
–5.0
–500
–200
–200
Unit
Vdc
Vdc
Vdc
mAdc
1
BASE
2
EMITTER
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%.
R
θJA
T
J
, T
stg
R
θJA
P
D
Symbol
P
D
Max
225
1.8
556
300
2.4
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
LMBTA92_93LT1-1/4
LRC [ LESHAN RADIO COMPANY ]
