LESHAN RADIO COMPANY, LTD.
LMBTA94LT1G
PNP EPITAXIAL PLANAR TRANSISTOR
We declare that the material of product
compliance with RoHS requirements.
LMBTA94LT1G
3
1
2
Description
The LMBTA94LT1G is designed for application
that requires high voltage.
SOT– 23
Features
•
High Breakdown Voltage: VCEO=400(Min.) at IC=1mA
•
Complementary to LMBTA94LT1G
DEVICE MARKING
LMBTA94LT1G = 4Z
1
BASE
COLLECTOR
3
2
EMITTER
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°C
Junction Temperature .................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 350 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... -400 V
VCEO Collector to Emitter Voltage ................................................................................... -400 V
VEBO Emitter to Base Voltage ............................................................................................. -6 V
IC Collector Current ...................................................................................................... -150 mA
Characteristics
(Ta=25 C)
°
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VBE(sat)
*hFE1
*hFE2
*hFE3
*hFE4
Cob
Min.
-400
-400
-6
-
-
-
-
-
-
-
50
75
60
20
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4
Max.
-
-
-
-100
-100
-500
-200
-300
-600
-900
-
200
-
-
6
Unit
V
V
V
nA
nA
nA
mV
mV
mV
mV
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-400V, IE=0
VEB=-6V, IC=0
VCE=-400V, VBE=0
IC=-1mA, IB=-0.1mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-50mA
VCE=-10V, IC=-100mA
VCE=-10V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
pF
1/3