LESHAN RADIO COMPANY, LTD.
20V P-Channel Enhancement-Mode MOSFET
V
DS
= -20V
R
DS(ON),
Vgs@-4.5V, Ids@-2.8A = 100
mΩ
R
DS(ON),
Vgs@-2.5V, Ids@-2.0A = 150
mΩ
3
LP2301LT1G
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Fully Characterized Avalanche Voltage and Current
Improved Shoot-Through FOM
1
2
SOT– 23 (TO–236AB)
▼
Simple Drive Requirement
▼
Small Package Outline
▼
Surface Mount Device
▼
Pb-Free package is available
3
D
G
1
2
Maximum Ratings and Thermal Characteristics
(T
A
= 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current 1)
Maximum Power Dissipation
TA = 25
o
C
TA = 75 C
Operating Junction and Storage Temperature Range
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance (PCB mounted)
2)
o
S
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
R
qJC
R
qJA
Limit
-20
±8
-2.3
-8
0.9
0.57
-55 to 150
Unit
V
A
W
o
C
o
C/W
140
Note: 1. Repetitive Rating: Pulse width limited by the Maximum junction temperation
2
2. 1-in
2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
1/3
LRC [ LESHAN RADIO COMPANY ]
