LESHAN RADIO COMPANY, LTD.
Common Anode Silicon
Dual Switching diodes
These Common Anode Silicon Epitaxial Planar Dual Diodes are
designed for use in ultra high speed switching applications. These
devices are housed in the SC-59 package which is designed for low
power surface mount applications.
•
Fast t
rr
, < 10 ns
•
Low C
D
, < 15 pF
•
Available in 8 mm Tape and Reel
Use M1MA151/2WAT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2WAT3 to order the 13 inch/10,000 unit reel.
ANODE
3
2
1
M1MA151WAT1
M1MA152WAT1
SC-59 PACKAGE
COMMON ANODE
DUAL SWITCHING DIODES
40/80 V-100mA
SURFACE MOUNT
3
CASE
318D–03, STYLE5
SC–59
2
CATHODE
1
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Reverse Voltage
Peak Reverse Voltage
Forward Current
Peak Forward Current
Peak Forward Surge Current
Symbol
M1MA151WAT1
V
R
M1MA152WAT1
M1MA151WAT1
M1MA152WAT1
Single
Dual
Single
Dual
Single
Dual
V
RM
I
F
I
FM
I
FSM
(1)
Value
40
80
40
80
100
150
225
340
500
750
Unit
Vdc
Vdc
mAdc
mAdc
mAdc
THERMAL CHARACTERISTICS
Rating
Power Dissipation
Junction Temperature
Storage Temperature
Characteristic
Reverse Voltage Leakage Current M1MA151WAT1
M1MA152WAT1
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time
1. t = 1 SEC
2. t
rr
Test Circuit
M1MA151WAT1
M1MA152WAT1
Symbo
P
D
T
J
T
stg
lMax
200
150
-55 to +150
Unit
mW
°C
°C
Condition
V
R
= 35 V
V
R
= 75 V
I
F
= 100 mA
I
R
= 100
µA
V
R
= 0, f = 1.0 MHz
I
F
= 10 mA, V
R
= 6.0 V,
R
L
= 100Ω, I
rr
= 0.1 I
R
Min
—
—
—
40
80
—
—
Max
0.1
0.1
1.2
—
—
15
10
Unit
µAdc
Vdc
Vdc
pF
ns
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
Symbol
I
R
V
F
V
R
C
D
t
rr
(2)
H3–1/2
LRC [ LESHAN RADIO COMPANY ]
