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MBD330DWT1 参数 Datasheet PDF下载

MBD330DWT1图片预览
型号: MBD330DWT1
PDF下载: 下载PDF文件 查看货源
内容描述: 双肖特基势垒二极管 [Dual SCHOTTKY Barrier Diodes]
分类和应用: 二极管
文件页数/大小: 5 页 / 241 K
品牌: LRC [ LESHAN RADIO COMPANY ]
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LESHAN RADIO COMPANY, LTD.
Dual SCHOTTKY Barrier Diodes
Application circuit designs are moving toward the consolidation of
device count and into smaller packages. The new SOT–363 package is
a solution which simplifies circuit design, reduces device count, and
reduces board space by putting two discrete devices in one small six–
leaded package. The SOT–363 is ideal for low–power surface mount
applications where board space is at a premium, such as portable
products.
6
5
MBD110DWT1
MBD330DWT1
MBD770DWT1
4
Surface Mount Comparisons:
Area (mm )
Max Package P
D
(mW)
2
SOT–363
4.6
120
2
SOT–23
7.6
225
1
1
2
3
Device Count
SOT–363
CASE 419B–01, STYLE 6
Space Savings:
Package
SOT–363
1 × SOT–23
40%
2 × SOT–23
70%
Cathode
6
N/C
5
Anode
4
The MBD110DW, MBD330DW, and MBD770DW devices are spin–offs of our popular
MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed
for high–efficiency UHF and VHF detector applications. Readily available to many other
fast switching RF and digital applications.
• Extremely Low Minority Carrier Lifetime
• Very Low Capacitance
• Low Reverse Leakage
1
Anode
2
N/C
3
Cathode
MAXIMUM RATINGS
Rating
Reverse Voltage
MBD110DWT1
MBD330DWT1
MBD770DWT1
Forward Power Dissipation
T
A
= 25°C
Junction Temperature
Storage Temperature Range
P
F
T
J
T
stg
Symbol
V
R
Value
7.0
30
70
120
–55 to +125
–55 to +150
Unit
Vdc
mW
°C
°C
DEVICE MARKING
MBD110DWT1 = M4
MBD330DWT1 = T4
MBD770DWT1 = H5
Thermal Clad is a trademark of the Bergquist Company.
MBD110–1/5