LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors
The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are
spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed
for general purpose amplifier applications and are housed in the SOT–363 six–leaded
surface mount package. By putting two discrete devices in one package, these devices
are ideal for low–power surface mount applications where board space is at a premium.
•
h
FE
, 100–300
•
Low V
CE(sat)
,
3
0.4 V
•
Simplifies Circuit Design
•
Reduces Board Space
•
Reduces Component Count
•
Available in 8 mm, 7–inch/3,000 Unit Tape and Reel
1
MBT3904DW1T1
MBT3906DW1T1
MBT3946DW1T1
6
5
4
See Table
2
3
SOT–363/SC–88
CASE 419B STYLE 1
6
5
5
4
6
5
4
6
4
Q
2
Q
1
Q
2
Q
1
Q
2
Q
1
1
1
2
3
1
2
3
2
3
MBT3946DW1T1
*Q
1
same as MBT3906DW1T1
Q
2
same as MBT3904DW1T1
MBT3904DW1T1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
Collector–Base Voltage
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
Emitter–Base Voltage
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
Collector Current -Continuous
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
Electrostatic Discharge
V
CBO
Symbol
V
CEO
MBT3906DW1T1
Voltage
Unit
V
40
–40
V
60
–40
V
EBO
V
6.0
–5.0
I
C
200
–200
ESD
HBM>16000,
MM>2000
mAdc
V
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation(1)
T
A
= 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage
Temperature
Symbol
P
D
Max
150
Unit
mW
ORDERING INFORMATION
Device
MBT3904DW1T1
MBT3906DW1T1
MBT3946DW1T1
Package
SOT–363
SOT–363
SOT–363
Shipping
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
R
θJA
T
J
, T
stg
833
–55 to +150
°C/W
°C
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
MBT3904–1/12
LRC [ LESHAN RADIO COMPANY ]
