LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diodes
ANODE
1
3
CATHODE
2
ANODE
MMBD2837LT1
MMBD2838LT1
3
MAXIMUM RATINGS(EACH DIODE)
Rating
Peak Reverse Voltage
D.C Reverse Voltage
Peak Forward Current
Average Rectified Current
Symbol
V
RM
V
R
I
FM
I
O
Value
75
30
50
450
300
150
100
mAdc
mAdc
Unit
Vdc
Vdc
1
2
MMBD2837LT1
MMBD2838LT1
CASE
318–08, STYLE 9
SOT– 23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
(1)
Symbol
P
D
Max
225
1.8
556
300
2.4
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
R
θ
JA
P
D
R
θ
JA
T
J
, T
stg
417
–55 to +150
DEVICE MARKING
MMBD2837LT1 = A5; MMBD2838LT1 = MA6
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) ( EACH DIODE )
Characteristic
Symbol
V
(BR)
I
R
MMBD2837LT1
MMBD2838LT1
C
T
V
F
—
—
—
—
—
Min
35
75
—
—
Max
—
—
µAdc
0.1
0.1
4.0
1.0
1.0
1.2
4.0
pF
Vdc
Unit
Vdc
OFF CHARACTERISTICS
Reverse Breakdown Voltage(I
(BR)
= 100
µ
Adc) MMBD2837LT1
MMBD2838LT1
Reverse Voltage Leakage Current
(V
R
= 30 Vdc)
(V
R
= 50 Vdc)
Diode Capacitance
(V
R
= 0 V, f = 1.0 MHz)
Forward Voltage(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 100 mAdc)
Reverse Recovery Time(I
F
=I
R
=10mAdc,I
R(REC)
=1.0mAdc)(Figure 1) t
rr
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ns
G21–1/2
LRC [ LESHAN RADIO COMPANY ]
