LESHAN RADIO COMPANY, LTD.
Dual Hot Carrier Mixer Diodes
These devices are designed primarily for UHF mixer applications but are
suitable also for use in detector and ultra–fast switching circuits.
• Very Low Capacitance — Less Than 1.0 pF @ Zero Volts
• Low Forward Voltage — 0.5 Volts (Typ) @ I
F
= 10 mA
MMBD352LT1
MMBD353LT1
MMBD354LT1
MMBD355LT1
3
1
MAXIMUM RATINGS
(EACH DIODE)
Rating
Continuous Reverse Voltage
Symbol
V
R
Symbol
P
D
Value
7.0
Max
225
1.8
556
300
2.4
R
θJA
T
J
,T
stg
417
–55 to +150
Unit
V
CC
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
1
CATHODE
1
ANODE
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board
(1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
2
CATHODE
3
CATHODE/ANODE
MMBD352LT1
CASE
318–08, STYLE 11
SOT– 23 (TO–236AB)
R
θJA
P
D
2
ANODE
3
CATHODE/ANODE
DEVICE MARKING
MMBD352LT1 = M5G; MMBD353LT1 = M4F; MMBD354LT1 = M6H; MMBD355LT1 = MJ1
ELECTRICAL CHARACTERISTICS
Characteristic
(T
A
=25°C unless otherwise noted)
(EACH DIODE)
MMBD353LT1
CASE
318–08, STYLE 19
SOT– 23 (TO–236AB)
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Forward Voltage
(I
F
= 10 mAdc)
Reverse Voltage Leakage Current
(V
(V
R
R
V
F
I
R
—
0.60
V
ANODE
1
3
CATHODE
2
ANODE
µ
A
—
—
0.25
10
1.0
pF
= 3.0 V)
= 7.0 V)
C
Capacitance
(V
R
= 0 V, f = 1.0 MHz)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
MMBD354LT1
CASE
318–08, STYLE 9
(TO–236AB)
SOT– 23
—
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ANODE
3
CATHODE
1
2
CATHODE
MMBD355LT1
CASE 318–08, STYLE 12
SOT– 23 (TO–236AB)
MMBD352. 353. 354. 355LT –1/2
LRC [ LESHAN RADIO COMPANY ]
