LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
ANODE
1
3
CATHODE
2
ANODE
MMBD6100LT1
3
1
2
MAXIMUM RATINGS(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Value
70
200
500
Unit
Vdc
mAdc
mAdc
CASE
318–08, STYLE9
SOT– 23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board
(1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
300
2.4
R
θ
JA
T
J
, T
stg
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
R
θ
JA
P
D
DEVICE MARKING
MMBD6100LT1 = 5BM
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)(EACH DIODE)
Characteristic
Symbol
V
(BR)
I
R
V
F
0.55
0.85
t
rr
C
—
—
0.7
1.1
4.0
2.5
ns
pF
Min
70
—
Max
—
0.1
Unit
Vdc
OFFCHARACTERISTICS
Reverse Breakdown Voltage
(I
(BR)
= 100
µ
Adc)
Reverse Voltage Leakage Current
(V
R
= 50 Vdc)
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 100 mAdc)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc,I
R(REC)
=1.0mAdc) (Figure 1)
Capacitance(V
R
=0V)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Vdc
µ
Adc
G23–1/2
LRC [ LESHAN RADIO COMPANY ]
