LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
3
COLLECTOR
1
BASE
MMBT2222LT1
MMBT2222ALT1
3
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
2
EMITTER
1
2
2222
30
60
5.0
600
2222A
40
75
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
θJA
P
D
1.8
556
300
2.4
417
–55 to +150
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
P
D
Max
225
Unit
mW
R
θJA
T
J
, T
stg
DEVICE MARKING
MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P;
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= 10
µAdc,
I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 10
µAdc,
I
C
= 0)
Collector Cutoff Current
( V
CE
= 60 Vdc, I
EB(off)
= 3.0Vdc)
Collector Cutoff Current
(V
CB
= 50 Vdc, I
E
= 0)
(V
CB
= 60 Vdc, I
E
= 0)
(V
CB
= 50 Vdc, I
E
= 0, T
A
= 125°C)
(V
CB
= 60 Vdc, I
E
= 0, T
A
= 125°C)
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222A
V
(BR)EBO
I
CEX
I
CBO
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
I
EBO
I
BL
––
––
––
––
—
—
0.01
0.01
10
10
100
20
nAdc
nAdc
V
(BR)CBO
V
(BR)CEO
30
40
60
75
5.0
6.0
—
—
––
10
Vdc
nAdc
µAdc
—
––
—
Vdc
Vdc
Emitter Cutoff Current
(V
EB
= 3.0 Vdc, I
C
= 0)
MMBT2222A
Base Cutoff Current
(V
CE
= 60 Vdc, V
EB(off)
= 3.0 Vdc)
MMBT2222A
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
O4–1/5
LRC [ LESHAN RADIO COMPANY ]
