LESHAN RADIO COMPANY, LTD.
Low Noise Transistor
NPN Silicon
MMBT2484LT1
3
COLLECTOR
1
BASE
1
2
3
2
EMITTER
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
CASE 318–08, STYLE 6
Value
60
60
6.0
50
Unit
Vdc
Vdc
Vdc
mAdc
SOT–23 (TO–236AB)
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
θJA
T
J
, T
stg
Symbol
P
D
Max
225
1.8
556
300
2.4
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
R
θJA
P
D
DEVICE MARKING
MMBT2484LT1 = 1U
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
Collector–Emitter Breakdown Voltage
(I
C
= 10
µAdc,
I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 10
µAdc,
I
C
= 0)
Collector Cutoff Current( V
CB
= 45Vdc, I
E
= 0)
( V
CB
= 45Vdc, I
E
= 0, T
A
=150 °C)
Emitter Cutoff Current
( V
EB
=5.0 Vdc, I
C
= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
I
CBO
I
EBO
—
—
—
10
10
10
nAdc
µAdc
nAdc
V
(BR)EBO
V
(BR)CEO
V
(BR)CBO
60
60
5.0
—
—
—
Vdc
Vdc
Vdc
O7–1/4
LRC [ LESHAN RADIO COMPANY ]
