LESHAN RADIO COMPANY, LTD.
Preliminary Information
General Purpose Transistor
PNP Silicon
MMBT2907AWT1
These transistors are designed for general purpose
mplifier applications. They are housed in the SOT–323/
SC–70 package which is designed for low power surface
mount applications.
3
COLLECTOR
1
1
BASE
2
3
2
EMITTER
CASE 419–02 , STYLE 3
SOT–323 / SC – 70
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
– 60
– 60
– 5.0
– 600
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
R
θJA
T
J
, T
stg
Max
150
833
–55 to +150
Unit
mW
°C/W
°C
DEVICE MARKING
MMBT2907AWT1 = 2F
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(2)
(I
C
= – 10 mAdc, I
B
= 0)
Collector–Emitter Breakdown Voltage
(I
C
= – 10 mAdc, I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= –10µAdc, I
C
= 0)
Base Cutoff Current
( V
CE
= –30Vdc, V
EB(OFF)
= –0.5Vdc )
Collector Cutoff Current
( V
CE
= –30Vdc, V
EB(OFF)
= –0.5Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%.
V
V
(BR)CBO
V
(BR)CEO
–60
—
Vdc
–60
–5.0
—
—
—
—
– 50
– 50
Vdc
Vdc
nAdc
nAdc
(BR)EBO
I
BL
I
CEX
K2–1/2
LRC [ LESHAN RADIO COMPANY ]
