LESHAN RADIO COMPANY, LTD.
Switching Transistor
PNP Silicon
3
COLLECTOR
MMBT3640LT1
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
1
2
Value
–12
–12
–4.0
–80
Unit
Vdc
Vdc
Vdc
mAdc
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
θJA
P
D
1.8
556
300
2.4
417
–55 to +150
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
P
D
Max
225
Unit
mW
R
θJA
T
J
, T
stg
DEVICE MARKING
MMBT3640LT1 = 2J
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –100
µAdc,
V
BE
= 0)
Collector–Emitter Sustaining Voltage(1 )
(I
C
= –10 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= –100
µAdc,
I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= –100
µAdc,
I
C
= 0)
Collector Cutoff Current
( V
CE
= –6.0Vdc, V
BE
= 0)
( V
CE
= –6.0Vdc, V
BE
= 0, T
A
= 65°C)
Base Current Current ( V
CE
= –6.0Vdc, V
EB
= 0 )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)CES
V
V
V
–12
–12
–12
–4.0
––
—
––
—
Vdc
Vdc
Vdc
Vdc
µAdc
—
—
—
–0.01
–1.0
–10
CEO(sus)
(BR)CBO
(BR)EBO
I
CES
I
B
nAdc
O10–1/3
LRC [ LESHAN RADIO COMPANY ]
